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A SI-CMOS-MEMS PROCESS USING BACK-SIDE GRINDING

A SI-CMOS-MEMS PROCESS USING BACK-SIDE GRINDING Y.-J. Fang 1, A. Wung 1, T. Mukherjee 1, and G.K. Fedder 1, 2, 3 1Department of Electrical and Comput er Engineering, Pi ttsburgh, PA, USA 2The Robotics Institute, Pittsburgh, PA, USA 3 Institute for Complex Engineered Systems, Pittsburgh, PA, USA ABSTRACT This paper presents a Si-CMOS-MEMS fabrication

Stealth Dicing Technical Information for MEMS

2014-7-25  2. Problems with dicing in MEMS fabrication processes 2.1 Grinding wheel type blade dicing 2.2 Making dicing a completely dry process 3. Stealth dicing technology 3.1 Basic principle of stealth dicing 3.2 Internal-process laser dicing versus surface-process laser processing 3.3 Range of thermal effects on MEMS devices during internal laser process

(PDF) Adaptable and integrated packaging platform

compound grinding process i s the adhesion between grinded . [25], hermetic lid sealing process [13,[26][27][28], Through-Silicon Via (TSV) process [29,30], and SPIL MEMS WLP process [31

SOI Wafer MEMS Engineering

In MEMS sensors, such as pressure sensor, sensitivity of the sensor is directly related to SOI membrane thickness. High variability of thickness will result in poor device properties. Our proprietary technology allows us to produce ultra uniform SOI wafers through layer

STR03019JT Wafer Scale Process for MEMS Packaging

2011-6-21  STR/03/019/JT Wafer Scale Process for MEMS Packaging Z. F. Wang, G. J. Qi, J. Wei, P. C. Lim and X. C. Shan Abstract In this paper, a novel wafer level packaging solution for microelectromechanical system (MEMS) device is reported.

Polishing Process an overview ScienceDirect Topics

The application of CMP process has widened the scope of its application to micro-electro-mechanical systems (MEMS), through-silicon via (TSVs), printed circuit boards (PCBs), and more. (e) Along with polishing the wafers in initial stage, the CMP technique is applied for processing semiconductor devices at various stages.

A SI-CMOS-MEMS process using back-side grinding

This paper presents a Si-CMOS-MEMS fabrication process which leaves the back-side silicon under the CMOS metal and oxide layers, and improves the uniformity of the back-side silicon using back-side grinding. The Si-CMOS-MEMS process includes a grinding process followed by a bonding process and conventional post-CMOS etch. A Si-CMOS-MEMS accelerometer is used to demonstrate the

Refined Si-CMOS-MEMS process using AOE, drie and

The Si-CMOS-MEMS process includes a grinding process followed by a bonding process and conventional post-CMOS etch. A Si-CMOS-MEMS accelerometer is

Investigation of precision grinding process for

The application of precision grinding for the formation of a silicon diaphragm is investigated. The test structures involved 2-6 mm diam diaphragms with thicknesses in the range of 25-150 μm. When grinding is performed without supporting the diaphragm, bending occurs due to nonuniform removal of the silicon material over the diaphragm region.

[PDF] modern grinding process technology Download

2021-2-16  The reviewed applications range from grinding systems for very large lenses and reflectors, through to medium size grinding machine processes, and down to grinding very small components used in MEMS . Early research chapters explore the influence of grinding wheel topography on surface integrity and wheel wear.

Stealth Dicing Technical Information for MEMS

2014-7-25  2. Problems with dicing in MEMS fabrication processes 2.1 Grinding wheel type blade dicing 2.2 Making dicing a completely dry process 3. Stealth dicing technology 3.1 Basic principle of stealth dicing 3.2 Internal-process laser dicing versus surface-process laser processing 3.3 Range of thermal effects on MEMS devices during internal laser process

MEMS Grinding Polishing Products & Suppliers

2021-2-3  DCM Tech Corp Decrease Lapping & Polishing Time there is potential for removing some other finishing, polishing, or lapping processes from the production process.DCM style grinders can handle large batches of jobs to help reduce production bottlenecks that can often be cuased by old, clunky grinding machines. DCM style IG series grinders feature variable speed electromagnetic

SOI Wafer MEMS Engineering

In MEMS sensors, such as pressure sensor, sensitivity of the sensor is directly related to SOI membrane thickness. High variability of thickness will result in poor device properties. Our proprietary technology allows us to produce ultra uniform SOI wafers through layer transfer instead of grinding

Waferdicing & Grinding Fraunhofer ISIT

The thinning of wafers is called grinding. As a rule, the grinding process takes place in several steps, each with a finer grain of the grinding wheels. On the one hand, this serves to optimize the process duration and, on the other hand, to reduce the damage to the crystal caused by grinding in the crystal.

Process induced sub-surface damage in mechanically

2008-5-28  The ductile grinding dominates during PG and RG, resulting in shallow layers of a-Si, deformed Si and stresses Si. In addition to ductile grinding, also brittle grinding is prominent in the RG process, resulting in a mixed grinding mechanism. The brittle fractures due to this brittle grinding go deep into the wafer and make it fragile.

Manufacturing technologies toward extreme precision

2019-6-18  Diamond grinding induces grinding marks and SSD in the form of crystal defects and amorphous layers . Those defects can be removed in the subsequent CMP process . As an alternative, Zhou et al proposed the chemo-mechanical-grinding (CMG) process, which combines the advantages of both grinding and polishing. The CMG is a fixed abrasive process

Investigation of precision grinding process for

The application of precision grinding for the formation of a silicon diaphragm is investigated. The test structures involved 2-6 mm diam diaphragms with thicknesses in the range of 25-150 μm. When grinding is performed without supporting the diaphragm, bending occurs due to nonuniform removal of the silicon material over the diaphragm region.

Wafer Backgrinding and Semiconductor Thickness

MEMS memory is typically around 30 µm thick. Backgrinding removes a precise amount of material to achieve the desired thickness, but it also causes damage to the wafer’s surface. That’s why polishing is also used. This description of the wafer backgrinding process is high-level, but the entire fabrication process is very tightly controlled.

SOI Wafer MEMS Engineering

In MEMS sensors, such as pressure sensor, sensitivity of the sensor is directly related to SOI membrane thickness. High variability of thickness will result in poor device properties. Our proprietary technology allows us to produce ultra uniform SOI wafers through layer transfer instead of grinding

Inventions Special Issue : Modern Grinding

The grinding process is used for both high-performance machining and surface finishing of hardened steel. In addition to the grinding parameters and the grinding fluid supply, the topography of the grinding wheel mainly determines the grinding process behavior and the grinding process result. (MEMS) devices. The importance of material

Precision grinding tools for Semiconductor &

2017-6-30  3D-TSV, MEMS and LED lighting Ultra thin wafer Prime wafers PV bricks You need Meister Abrasives’ comprehensive industry and process knowledge to engineer tomorrow’s high-tech solutions for modern society. High-tech processes in the manufac-ture of semi-conductor components require high-tech grinding wheels.

Process induced sub-surface damage in mechanically

2008-5-28  The ductile grinding dominates during PG and RG, resulting in shallow layers of a-Si, deformed Si and stresses Si. In addition to ductile grinding, also brittle grinding is prominent in the RG process, resulting in a mixed grinding mechanism. The brittle fractures due to this brittle grinding go deep into the wafer and make it fragile.

Manufacturing technologies toward extreme precision

2019-6-18  Diamond grinding induces grinding marks and SSD in the form of crystal defects and amorphous layers . Those defects can be removed in the subsequent CMP process . As an alternative, Zhou et al proposed the chemo-mechanical-grinding (CMG) process, which combines the advantages of both grinding and polishing. The CMG is a fixed abrasive process

Wafers for MEMS and Semiconductors

Wafer Universe offers a wide range of high-quality wafers from Glass and Quartz available off the shelf.At Wafer Universe you will find a wide selection of various sized wafers in different diameters and thicknesses as well as materials, including Borosilicate Wafers (with regular or enhanced MDF polishing), Alkaline free glass wafers and Quartz wafers (semiconductor grade quartz).

Lecture Notes in Mechanical Engineering SpringerLink

Lecture Notes in Mechanical Engineering (LNME) publishes the latest developments in Mechanical Engineering—quickly, informally and with high quality. Original research reported in proceedings and post-proceedings represents the core of LNME. Volumes published in LNME embrace all aspects, subfields and new challenges of mechanical engineering.

朱福龙-华中科技大学机械科学与工程学院 Huazhong

2021-1-29  朱福龙(Zhu Fulong,Professor ),男,1974 年生,江西新干县人,华中科技大学机械科学与工程学院博士、教授、博士生导师;1998 年 6 月于武汉理工大学汽车学院获学士学位,2003 年 6 月于华中科技大学工程力学系获硕士学位,2007 年 6 月于华中科技大学机械科学与工程学院获机械工程博士学